Above Room Temperature Ferromagnetism in Mn-ion Implanted Si

Authors

Andrew Stollenwerk, SUNY Polytechnic InstituteFollow
M. Bolduc, SUNY Polytechnic InstituteFollow
C. Awo-Affouda, SUNY Polytechnic InstituteFollow
M. B. Huang, SUNY Polytechnic InstituteFollow
F. G. Ramos, SUNY Polytechnic Institute
G. Agnello, SUNY Polytechnic Institute
V. P. LaBella, SUNY Polytechnic InstituteFollow

Document Type

Article

Journal/Book/Conference Title

Physical Review B - Condensed Matter and Materials Physics

Volume

71

Issue

3

Abstract

Above room temperature ferromagnetic behavior is achieved in Si through Mn ion implantation. Three-hundred-keV Mn + ions were implanted to 0.1% and 0.8% peak atomic concentrations, yielding a saturation magnetization of 0.3 emu/g at 300 K for the highest concentration as measured using a SQUID magnetometer. The saturation magnetization increased by ∼2X after annealing at 800°C for 5 min. The Curie temperature for all samples was found to be greater than 400 K. A significant difference in the temperature-dependent remnant magnetization between the implanted p-type and n-type Si is observed, giving strong evidence that a Si-based diluted magnetic semiconductor can be achieved. ©2005 The American Physical Society.

Department

Department of Physics

Original Publication Date

1-1-2005

DOI of published version

10.1103/PhysRevB.71.033302

Recommended Citation

Stollenwerk, Andrew; Bolduc, M.; Awo-Affouda, C.; Huang, M. B.; Ramos, F. G.; Agnello, G.; and LaBella, V. P., "Above Room Temperature Ferromagnetism in Mn-ion Implanted Si" (2005). Faculty Publications. 6066.
https://scholarworks.uni.edu/facpub/6066