Faculty Publications

Combined Molecular Beam Epitaxy Low Temperature Scanning Tunneling Microscopy System: Enabling Atomic Scale Characterization of Semiconductor Surfaces and Interfaces

Document Type

Article

Journal/Book/Conference Title

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volume

23

Issue

4

First Page

1684

Last Page

1689

Abstract

A molecular beam epitaxy and low temperature scanning tunneling microscopy chamber have been integrated to characterize both compound and elemental semiconductor surfaces and interfaces. The integration of these two commercially available systems has been achieved using a custom designed sample transfer mechanism. The MBE growth chamber is equipped with electron diffraction and provides substrate temperature measurements and control by means of band-edge thermometry accurate to within ±0.5 °C. In addition, the microscope can operate at temperatures as low as 4 K and perform ballistic electron emission microscopy measurements. The chamber that houses the microscope includes a preparation chamber with an evaporation source for metals. The entire STM chamber also rests on an active vibration isolation table, while still maintaining an all ultrahigh vacuum connection to the MBE system. © 2005 American Vacuum Society.

Department

Department of Physics

Original Publication Date

12-1-2005

DOI of published version

10.1116/1.1941167

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