Faculty Publications

Hot Electron Transport Across Manganese Silicide Layers on the Si(001) Surface

Document Type

Article

Journal/Book/Conference Title

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volume

24

Issue

4

First Page

1610

Last Page

1612

Abstract

Ballistic electron emission microscopy (BEEM) has been performed on MnSiSi (001) Schottky diodes at 80 K to study the hot electron transport properties. The BEEM spectra best fit the thermally broadening 52 power law model with two threshold heights at 0.71 and 0.86 eV, indicating a complex interface band structure. In addition, the normalized BEEM current in the MnSi overlayer was found to be approximately seven times less than is observed in AuSi (001) samples of similar thicknesses, indicating a larger amount of hot electron scattering in the MnSiSi (001) samples. © 2006 American Vacuum Society.

Department

Department of Physics

Original Publication Date

7-1-2006

DOI of published version

10.1116/1.2206195

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