Faculty Publications

Probing the Hot-Electron Transport Properties and Interface Band Structure of Fe/Si (001) and Fe81 C19/Si (001) Schottky Diodes

Document Type

Article

Journal/Book/Conference Title

Physical Review B - Condensed Matter and Materials Physics

Volume

74

Issue

15

Abstract

Ballistic electron emission microscopy (BEEM) has been performed on both Au/Fe81 C19/Si (001) and Au/Fe/Si (001) Schottky diodes at 80 K. The Schottky heights were measured to be 0.68±0.02 eV and 0.70±0.02 eV for the Fe81 C19/Si (001) and Fe/Si (001) interfaces, respectively. In addition, a second threshold voltage was observed for the Fe/Si (001) interface at 1.29±0.04 eV and attributed to an additional conduction band minimum at the interface that arises from the bonding of the Fe to the Si. The hot electron attenuation lengths at 1.25 eV were measured to be 3.5±1.0 nm and 3.0±0.9 nm for Fe81 C19 and Fe, respectively. The attenuation length of the Fe81 C19 showed a decrease with increasing energy consistent with the universal curve for electron-electron scattering. However, the attenuation length for the Fe showed this decrease only until the onset of the second threshold after which it increased. It is proposed that this increase is attributed to the parallel momentum distribution of the additional conduction band minimum at the Fe/Si (001) interface. © 2006 The American Physical Society.

Department

Department of Physics

Original Publication Date

11-6-2006

DOI of published version

10.1103/PhysRevB.74.155328

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