Ballistic Electron Transport Properties Across The Manganese/Silicon Interface

Authors

B. E. Friend, University of Northern IowaFollow
E. Wolter, University of Northern IowaFollow
T. E. Kidd, University of Northern IowaFollow
A. J. Stollenwerk, University of Northern IowaFollow

Document Type

Article

Journal/Book/Conference Title

Applied Physics Letters

Volume

102

Issue

9

Abstract

Ballistic electron transmission is used to investigate electron transport across the Au/Mn/Si and Au/Si interfaces. The Au/Mn/Si spectra exhibit multiple threshold voltages above the Schottky barrier. The energetic spacing of these threshold voltages is found to vary with Mn thickness. These features are believed to be the result of resonant transport. Transmission calculations match the experimental data exceedingly well, but only when one accounts for reflections at the Au/Mn interface. Interestingly, scattering at the Mn/Si interface is over an order of magnitude less than at the Au/Si interface, suggesting a better matching of available states at the Mn/Si interface. © 2013 American Institute of Physics.

Department

Department of Physics

Original Publication Date

3-4-2013

DOI of published version

10.1063/1.4794867

Recommended Citation

Friend, B. E.; Wolter, E.; Kidd, T. E.; and Stollenwerk, A. J., "Ballistic Electron Transport Properties Across The Manganese/Silicon Interface" (2013). Faculty Publications. 1631.
https://scholarworks.uni.edu/facpub/1631