2026 Summer Undergraduate Research Program (SURP) Symposium

Location

Schindler Education Center, University of Northern Iowa

Presentation Type

Poster Presentation (UNI Access Only)

Document Type

poster

Abstract

  • Mn₂FeSn is a Heusler alloy with a hexagonal crystal structure and tunable magnetic properties.
  • Exchange Bias (EB) effect is a magnetic effect of ferromagnetic (FM) materials that are coupled to antiferromagnetic (AFM) materials.
  • Coercivity or the coercive field is the opposing magnetic field required to reduce a magnetic material’s magnetization to zero.
  • Field-cooled (FC) samples are heated to a high temperature and then cooled in the presence of an applied magnetic field, allowing the magnetic spins to align with the field and retain this orientation.
  • Zero field cooled (ZFC) samples are not cooled in a field when measured.
  • Relevant for magnetic memory and spintronic devices.

Start Date

31-7-2026 11:00 AM

End Date

31-7-2026 1:30 PM

Event Host

Summer Undergraduate Research Program, University of Northern Iowa

Faculty Advisor

Paul M. Shand

Department

Department of Physics

File Format

application/pdf

File Size

1 MB

Off-Campus Download

Share

COinS
 
Jul 31st, 11:00 AM Jul 31st, 1:30 PM

Magnetic Coercivity and Exchange Bias of Mn2FeSn Heusler Alloy

Schindler Education Center, University of Northern Iowa

  • Mn₂FeSn is a Heusler alloy with a hexagonal crystal structure and tunable magnetic properties.
  • Exchange Bias (EB) effect is a magnetic effect of ferromagnetic (FM) materials that are coupled to antiferromagnetic (AFM) materials.
  • Coercivity or the coercive field is the opposing magnetic field required to reduce a magnetic material’s magnetization to zero.
  • Field-cooled (FC) samples are heated to a high temperature and then cooled in the presence of an applied magnetic field, allowing the magnetic spins to align with the field and retain this orientation.
  • Zero field cooled (ZFC) samples are not cooled in a field when measured.
  • Relevant for magnetic memory and spintronic devices.