Electrical Transport Measurements on Ni Films Deposited on MoS₂

Author

Young Moua, University of Northern IowaFollow
Paul Shand Ph.D., University of Northern IowaFollow
Colin Gorgen, University of Northern IowaFollow
Andrew Stollenwerk Ph.D., University of Northern IowaFollow

Location

Ballroom, Maucker Student Union, University of Northern Iowa

Presentation Type

Poster Presentation (UNI Access Only)

Document Type

poster

Keywords

Molybdenum disulfide--Electric properties; Nickel films--Electric properties; Spintronics;

Abstract

MoS2 is a semiconductor with attractive characteristics that make it a possible replacement material for silicon in electronics devices. It is therefore important to study the behavior of metals that are in contact with MoS2. We have investigated the electrical resistance of a thin film of nickel grown on MoS2 as a function of temperature with and without a magnetic field applied. The Ni-MoS2 structure exhibits semiconducting behavior. We present evidence that electron transport proceeds via hopping.

Start Date

30-7-2021 11:30 AM

End Date

30-7-2021 1:15 PM

Event Host

Summer Undergraduate Research Program, University of Northern Iowa

Faculty Advisor

Paul Shand

Faculty Advisor

Andrew Stollenwerk

Department

Department of Physics

Copyright

©2021 Young Moua, Paul Shand, Colin Gorgen, and Andrew Stollenwerk

File Format

application/pdf

Recommended Citation

Moua, Young; Shand, Paul Ph.D.; Gorgen, Colin; and Stollenwerk, Andrew Ph.D., "Electrical Transport Measurements on Ni Films Deposited on MoS₂" (2021). Summer Undergraduate Research Program (SURP) Symposium. 37.
https://scholarworks.uni.edu/surp/2021/all/37