2020 Research in the Capitol

Title

Reducing MoS2 into single molecular layers using gold-enhanced exfoliation

Presentation Type

Poster Presentation

Abstract

A gold-assisted mechanical exfoliation technique was developed to create single molecular layers of MoS2. The presence of weak Van der Waals forces between TMDC molecular layers allows the material to be easily exfoliated to produce single layers, but factors such as air exposure and deposition thickness can dictate the yield of single layers. Exfoliated samples are examined via Atomic Force Microscopy (AFM) to confirm finite layer production and density under these exposure conditions as well as analyze the Au/MoS2 interface. Ultimately, the large scale production of finite layer MoS2 allows for ease of testing as related to its electrical and optical properties. MoS2 is a high mobility direct band gap semiconductor, allowing energy transition states to be more accessible as compared to its bulk counterparts which are defined by an indirect band gap.

Start Date

24-3-2020 11:00 AM

End Date

24-3-2020 2:30 PM

Event Host

University Honors Programs, Iowa Regent Universities

Faculty Advisor

Tim Kidd

Department

Department of Physics

File Format

application/pdf

Electronic copy is not available through UNI ScholarWorks.

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Mar 24th, 11:00 AM Mar 24th, 2:30 PM

Reducing MoS2 into single molecular layers using gold-enhanced exfoliation

A gold-assisted mechanical exfoliation technique was developed to create single molecular layers of MoS2. The presence of weak Van der Waals forces between TMDC molecular layers allows the material to be easily exfoliated to produce single layers, but factors such as air exposure and deposition thickness can dictate the yield of single layers. Exfoliated samples are examined via Atomic Force Microscopy (AFM) to confirm finite layer production and density under these exposure conditions as well as analyze the Au/MoS2 interface. Ultimately, the large scale production of finite layer MoS2 allows for ease of testing as related to its electrical and optical properties. MoS2 is a high mobility direct band gap semiconductor, allowing energy transition states to be more accessible as compared to its bulk counterparts which are defined by an indirect band gap.