2020 Research in the Capitol
Reducing MoS2 into single molecular layers using gold-enhanced exfoliation
Presentation Type
Poster Presentation (Electronic Copy Not Available)
Abstract
A gold-assisted mechanical exfoliation technique was developed to create single molecular layers of MoS2. The presence of weak Van der Waals forces between TMDC molecular layers allows the material to be easily exfoliated to produce single layers, but factors such as air exposure and deposition thickness can dictate the yield of single layers. Exfoliated samples are examined via Atomic Force Microscopy (AFM) to confirm finite layer production and density under these exposure conditions as well as analyze the Au/MoS2 interface. Ultimately, the large scale production of finite layer MoS2 allows for ease of testing as related to its electrical and optical properties. MoS2 is a high mobility direct band gap semiconductor, allowing energy transition states to be more accessible as compared to its bulk counterparts which are defined by an indirect band gap.
Start Date
24-3-2020 11:00 AM
End Date
24-3-2020 2:30 PM
Event Host
University Honors Programs, Iowa Regent Universities
Faculty Advisor
Tim Kidd
Department
Department of Physics
Copyright
©2020 Taylor Harris
File Format
application/pdf
Recommended Citation
Harris, Taylor, "Reducing MoS2 into single molecular layers using gold-enhanced exfoliation" (2020). Research in the Capitol. 10.
https://scholarworks.uni.edu/rcapitol/2020/all/10
Reducing MoS2 into single molecular layers using gold-enhanced exfoliation
A gold-assisted mechanical exfoliation technique was developed to create single molecular layers of MoS2. The presence of weak Van der Waals forces between TMDC molecular layers allows the material to be easily exfoliated to produce single layers, but factors such as air exposure and deposition thickness can dictate the yield of single layers. Exfoliated samples are examined via Atomic Force Microscopy (AFM) to confirm finite layer production and density under these exposure conditions as well as analyze the Au/MoS2 interface. Ultimately, the large scale production of finite layer MoS2 allows for ease of testing as related to its electrical and optical properties. MoS2 is a high mobility direct band gap semiconductor, allowing energy transition states to be more accessible as compared to its bulk counterparts which are defined by an indirect band gap.
