Faculty Work
Document Type
Article
Publication Version
Published Version
Keywords
AUGMENTED-WAVE METHOD, EMISSION MICROSCOPY, ROOM-TEMPERATURE, TRANSISTORS, HETEROSTRUCTURES, CONTACTS, SPECTROSCOPY, TRANSITIONS, ABSORPTION, NANOSHEETS
Journal/Book/Conference Title Title
JOURNAL OF APPLIED PHYSICS
Volume
123
Issue
17
Abstract
Ballistic electron emission microscopy (BEEM) has been used to study the processes affecting electron transport along the [0001] direction of finite layer MoS2 flakes deposited onto the surface of Au/Si(001) Schottky diodes. Prominent features present in the differential spectra from the MoS2 flakes are consistent with the density of states of finite layer MoS2 calculated using density functional theory. The ability to observe the electronic structure of the MoS2 appears to be due to the relatively smooth density of states of Si in this energy range and a substantial amount of elastic or quasi-elastic scattering along the MoS2/Au/Si(001) path. Demonstration of these measurements using BEEM suggests that this technique could potentially be used to study electron transport through van der Waals heterostructures, with applications in a number of electronic devices.
Department
Department of Physics
Original Publication Date
5-2018
DOI of published version
10.1063/1.5026397
Repository
UNI ScholarWorks, University of Northern Iowa, Rod Library
Copyright
@Holzapfel, et al.
Language
en
File Format
application/pdf
Recommended Citation
Holzapfel, R; Weber, Jake; Lukashev, Pavel; and Stollenwerk, Andrew, "Out-of-plane electron transport in finite layer MoS2" (2018). Faculty Work. 28.
https://scholarworks.uni.edu/phy_facpub/28
Comments
First published in The Journal of Applied Physics v.123 n.17 (May 2018), by AIP Publishing.