Sn/Ge(111) Surface Charge-Density-Wave Phase Transition

Authors

• T. E. Kidd, University of Illinois at Urbana-ChampaignFollow
• T. Miller, University of Illinois at Urbana-ChampaignFollow
• M. Y. Chou, Georgia Institute of TechnologyFollow
• T.-C. Chiang, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Journal/Book/Conference Title Title

Physical Review Letters

Volume

85

Issue

17

First Page

3684

Last Page

3687

Abstract

Angle-resolved photoemission has been utilized to study the surface electronic structure of 1/3 monolayer of Sn of Ge(111) in both the room-temperature (√3 × √3)R30° phase and the low-temprature (3 × 3) charge-density-wave phase. The results reveal a gap opening around the (3 × 3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting. A highly sensitive electronic response to doping by intrinsic surface defects is the cause for the unusual behaior, and a detailed calculation illustrates the origin of the (3 × 3) symmetry.

Department

Department of Physics

Comments

First published in Physical Review Letters, v. 85, n. 17 (2000), pp. 3684-3687, published by the American Physical Society.

Original Publication Date

10-2000

Repository

UNI ScholarWorks, University of Northern Iowa, Rod Library

Copyright

©2000 T.E. Kidd, T. Miller, M.Y. Chou, and T.-C. Chiang. The copyright holder has granted permission for posting.

Date Digital

2000

Language

EN

File Format

application/pdf

Recommended Citation

Kidd, T. E.; Miller, T.; Chou, M. Y.; and Chiang, T.-C., "Sn/Ge(111) Surface Charge-Density-Wave Phase Transition" (2000). Faculty Work. 18.
https://scholarworks.uni.edu/phy_facpub/18