Faculty Publications
Criteria For Electronic Growth Of Au On Layered Semiconductors
Document Type
Article
Journal/Book/Conference Title
Journal of Applied Physics
Volume
132
Issue
24
Abstract
An electronic growth mode has been reported to occur in several noble metals on MoS2 but has not been observed on other layered semiconductors. In this work, the experiments show that Au(111) islands initially follow an electronic growth mode on WS2, matching the quantization seen in Au/MoS2. However, while epitaxial nanostructures with similar features are observed on WSe2, there is no sign of electronic growth. Binding energy calculations show that multiple bonding sites have nearly the same energy on both WS2 and MoS2, while Au strongly prefers a single bonding site on WSe2. Having multiple sites with the same energy gives flexibility in interfacial bonding that can alleviate strain from the 9+% lattice mismatch in these systems, which would, otherwise, easily suppress quantum size effects from electronic growth modes. These results should be useful in predicting which systems undergo quantized electronic growth on layered semiconductors.
Department
Department of Physics
Original Publication Date
12-28-2022
DOI of published version
10.1063/5.0125994
Recommended Citation
Kidd, Timothy E.; Kruckenberg, Preston; Gorgen, Colin; Lukashev, Pavel V.; and Stollenwerk, Andrew J., "Criteria For Electronic Growth Of Au On Layered Semiconductors" (2022). Faculty Publications. 5271.
https://scholarworks.uni.edu/facpub/5271