Faculty Publications

Electric-Field-Enhanced Persistent Photoconductivity In A Zn0.02Cd0.98Te Semiconductor Alloy

Document Type

Article

Journal/Book/Conference Title

Physical Review B

Volume

46

Issue

7

First Page

3810

Last Page

3816

Abstract

Persistent photoconductivity (PPC) has been investigated in a Zn0.02Cd0.98Te semiconductor alloy. A transition from a photoconductivity phase to a PPC phase has been observed and a coexistence curve that separates these two phases has been obtained. We find that such a transition can be controlled by the bias voltage and excitation photon dose. The relaxation of PPC is found to follow a power law, IPPC(t)t-α. The decay parameter α is obtained as a function of the bias voltage, which shows that the carrier decay rate decreases almost linearly with increasing bias voltage in the PPC phase. A possible mechanism is the presence of random local-potential fluctuations in the sample, which strongly influence the carrier transport properties. The fluctuations could be induced either by alloy disorder or impurity compensation. © 1992 The American Physical Society.

Department

Department of Physics

Original Publication Date

1-1-1992

DOI of published version

10.1103/PhysRevB.46.3810

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