Faculty Publications
Identifying Phenomenological Magnetoresistive Properties Of Spin Valves
Document Type
Article
Journal/Book/Conference Title
IEEE Transactions on Magnetics
Volume
32
Issue
5 PART 2
First Page
4609
Last Page
4611
Abstract
A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjunction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices. © 1996 IEEE.
Department
Department of Physics
Original Publication Date
12-1-1996
DOI of published version
10.1109/20.539094
Recommended Citation
Oti, J. O.; Kim, Y. K.; and Shand, P. M., "Identifying Phenomenological Magnetoresistive Properties Of Spin Valves" (1996). Faculty Publications. 4087.
https://scholarworks.uni.edu/facpub/4087