Faculty Publications

Spin-Glass Ordering In The Diluted Magnetic Semiconductor

Document Type

Article

Journal/Book/Conference Title

Physical Review B - Condensed Matter and Materials Physics

Volume

58

Issue

19

First Page

12876

Last Page

12882

Abstract

We have performed both ac susceptibility and dc magnetization measurements on the diluted magnetic semiconductor (Formula presented) The measurements clearly indicate spin-glass behavior. For samples with concentrations (Formula presented) and (Formula presented) the data for the imaginary part of the complex susceptibility (Formula presented) were analyzed according to conventional power-law dynamics and good scaling was obtained with the critical exponent values (Formula presented) and (Formula presented) These values of (Formula presented) and β are consistent with results obtained in other insulating spin-glass systems with short-range interactions. Because of the presence of significant Dzyaloshinsky-Moriya anisotropy in these materials, an attempt was also made to fit the data using an activated dynamics model. However, the scaling of the (Formula presented) data was less satisfactory in this case. Magnetization measurements on the (Formula presented) sample also showed a spin-glass-like transition. Scaling of the nonlinear magnetization just above the transition gave (Formula presented) K, and the critical exponent values (Formula presented) and (Formula presented) The value of (Formula presented) obtained from the static magnetization measurements is in good agreement with the value (Formula presented) K obtained from the dynamic scaling analysis. Further, the value for the critical exponent γ obtained in this work is in fair agreement with values reported for other spin-glass materials. These results represent convincing evidence that diluted magnetic semiconductors are a subset of the class of insulating spin-glass materials with short-range interactions. © 1998 The American Physical Society.

Department

Department of Physics

Original Publication Date

1-1-1998

DOI of published version

10.1103/PhysRevB.58.12876

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