Faculty Publications

Magnetic Behavior Of The Ii-V-Diluted Magnetic Semiconductor Cd1-Xmnxsb

Document Type

Article

Keywords

Crystal growth, Magnetic measurements, Semiconductors, X-ray diffraction

Journal/Book/Conference Title

Journal of Magnetism and Magnetic Materials

Volume

321

Issue

8

First Page

1072

Last Page

1076

Abstract

Polycrystalline samples of the II-V-diluted magnetic semiconductor Cd1-xMnxSb (x=0.05-0.20) were synthesized. Standard high temperature ceramic methods under an inert atmosphere were utilized for sample fabrication. Structural characterization was done using X-ray diffractometry (XRD), which indicated that a simple substitution of Mn for Cd is probably not occurring. Hysteresis, ac susceptibility, dc magnetization, and spontaneous magnetization measurements were performed for Cd0.90Mn0.10Sb. The hysteresis data indicated the presence of a ferromagnetic component. Ferromagnetism in the Cd0.90Mn0.10Sb system is likely due to two sources: Mn spins in small Mn-rich regions and a small amount of MnSb in a minority phase. Analysis of the spontaneous magnetization as a function of temperature for Cd0.90Mn0.10Sb yielded the value 0.172 for the critical exponent β. In MnSb, β was found to have the value 0.379, which is close to the theoretical value for 3D-Heisenberg systems. Thus, in Cd0.90Mn0.10Sb, the ferromagnetism is not of the 3D-Heisenberg type; rather, it is closer to 2D Ising behavior, indicating reduced effective dimensionality. © 2008 Elsevier B.V. All rights reserved.

Department

Department of Physics

Original Publication Date

4-1-2009

DOI of published version

10.1016/j.jmmm.2008.10.020

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