Large Physisorption Strain In Chemical Vapor Deposition Of Graphene On Copper Substrates

Authors

Rui He, University of Northern Iowa
Liuyan Zhao, Columbia UniversityFollow
Nicholas Petrone, Columbia University
Keun Soo Kim, Columbia University
Michael Roth, University of Northern IowaFollow
James Hone, Columbia University
Philip Kim, Columbia UniversityFollow
Abhay Pasupathy, Columbia UniversityFollow
Aron Pinczuk, Columbia UniversityFollow

Document Type

Article

Keywords

copper, CVD, Graphene, strain

Journal/Book/Conference Title

Nano Letters

Volume

12

Issue

5

First Page

2408

Last Page

2413

Abstract

Graphene single layers grown by chemical vapor deposition on single crystal Cu substrates are subject to nonuniform physisorption strains that depend on the orientation of the Cu surface. The strains are revealed in Raman spectra and quantitatively interpreted by molecular dynamics (MD) simulations. An average compressive strain on the order of 0.5% is determined in graphene on Cu(111). In graphene on Cu (100), MD simulations interpret the observed highly nonuniform strains. © 2012 American Chemical Society.

Department

Department of Physics

Original Publication Date

5-9-2012

DOI of published version

10.1021/nl300397v

Recommended Citation

He, Rui; Zhao, Liuyan; Petrone, Nicholas; Kim, Keun Soo; Roth, Michael; Hone, James; Kim, Philip; Pasupathy, Abhay; and Pinczuk, Aron, "Large Physisorption Strain In Chemical Vapor Deposition Of Graphene On Copper Substrates" (2012). Faculty Publications. 1790.
https://scholarworks.uni.edu/facpub/1790