Faculty Publications
Effect Of Growth Temperature On Ballistic Electron Transport Through The Au/Si(001) Interface
Document Type
Article
Journal/Book/Conference Title
Journal of Applied Physics
Volume
115
Issue
16
Abstract
Ballistic electron emission spectroscopy was used to investigate electron transport through Au/Si(001) Schottky diodes grown at 35 °C and 22 °C. Aside from a decreased Schottky height, this small increase in temperature introduced an energy dependent scattering component, which was absent in the samples grown at 22 °C. These differences may be attributed to the increased amount of Au-Si intermixing at the interface. Despite the non-epitaxial nature of the growth technique, strong evidence was found in both sets of samples that indicated the presence of a forward-focused current subject to some degree of parallel momentum conservation at the interface. This evidence was present in all samples grown at 35 °C, but was only observed in those samples grown at 22 °C when the Au films were 10 nm or thicker. This sensitivity to growth temperature could account for discrepancies in previous studies on Au/Si(001). © 2014 AIP Publishing LLC.
Department
Department of Physics
Original Publication Date
4-28-2014
DOI of published version
10.1063/1.4873172
Recommended Citation
Eckes, M. W.; Friend, B. E.; and Stollenwerk, A. J., "Effect Of Growth Temperature On Ballistic Electron Transport Through The Au/Si(001) Interface" (2014). Faculty Publications. 1388.
https://scholarworks.uni.edu/facpub/1388
