Faculty Publications

Effect Of Growth Temperature On Ballistic Electron Transport Through The Au/Si(001) Interface

Document Type

Article

Journal/Book/Conference Title

Journal of Applied Physics

Volume

115

Issue

16

Abstract

Ballistic electron emission spectroscopy was used to investigate electron transport through Au/Si(001) Schottky diodes grown at 35 °C and 22 °C. Aside from a decreased Schottky height, this small increase in temperature introduced an energy dependent scattering component, which was absent in the samples grown at 22 °C. These differences may be attributed to the increased amount of Au-Si intermixing at the interface. Despite the non-epitaxial nature of the growth technique, strong evidence was found in both sets of samples that indicated the presence of a forward-focused current subject to some degree of parallel momentum conservation at the interface. This evidence was present in all samples grown at 35 °C, but was only observed in those samples grown at 22 °C when the Au films were 10 nm or thicker. This sensitivity to growth temperature could account for discrepancies in previous studies on Au/Si(001). © 2014 AIP Publishing LLC.

Department

Department of Physics

Original Publication Date

4-28-2014

DOI of published version

10.1063/1.4873172

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