Stacking-Dependent Shear Modes In Trilayer Graphene
Applied Physics Letters
We observe distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We find that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence is not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes.
Department of Physics
Original Publication Date
DOI of published version
Lui, Chun Hung; Ye, Zhipeng; Keiser, Courtney; Barros, Eduardo B.; and He, Rui, "Stacking-Dependent Shear Modes In Trilayer Graphene" (2015). Faculty Publications. 1280.