Stacking-Dependent Shear Modes In Trilayer Graphene

Authors

Chun Hung Lui, Massachusetts Institute of TechnologyFollow
Zhipeng Ye, University of Northern IowaFollow
Courtney Keiser, University of Northern IowaFollow
Eduardo B. Barros, Universidade Federal do Ceará
Rui He, University of Northern IowaFollow

Document Type

Article

Journal/Book/Conference Title

Applied Physics Letters

Volume

106

Issue

4

Abstract

We observe distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We find that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence is not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes.

Department

Department of Physics

Original Publication Date

1-26-2015

DOI of published version

10.1063/1.4906579

Recommended Citation

Lui, Chun Hung; Ye, Zhipeng; Keiser, Courtney; Barros, Eduardo B.; and He, Rui, "Stacking-Dependent Shear Modes In Trilayer Graphene" (2015). Faculty Publications. 1280.
https://scholarworks.uni.edu/facpub/1280