Dopant Segregation In Polycrystalline Monolayer Graphene

Authors

Liuyan Zhao, Columbia UniversityFollow
Rui He, Columbia UniversityFollow
Amir Zabet-Khosousi, Columbia University
Keun Soo Kim, Columbia UniversityFollow
Theanne Schiros, Columbia UniversityFollow
Michael Roth, University of Northern IowaFollow
Philip Kim, Columbia UniversityFollow
George W. Flynn, Columbia University
Aron Pinczuk, Columbia UniversityFollow
Abhay N. Pasupathy, Columbia UniversityFollow

Document Type

Article

Keywords

Chemical vapor deposition, dopant segregation, micro-Raman spectroscopy, nitrogen-doped graphene, scanning tunneling microscopy

Journal/Book/Conference Title

Nano Letters

Volume

15

Issue

2

First Page

1428

Last Page

1436

Abstract

Heterogeneity in dopant concentration has long been important to the electronic properties in chemically doped materials. In this work, we experimentally demonstrate that during the chemical vapor deposition process, in contrast to three-dimensional polycrystals, the substitutional nitrogen atoms avoid crystal grain boundaries and edges over micron length scales while distributing uniformly in the interior of each grain. This phenomenon is universally observed independent of the details of the growth procedure such as temperature, pressure, substrate, and growth precursor.

Department

Department of Physics

Original Publication Date

2-11-2015

DOI of published version

10.1021/nl504875x

Recommended Citation

Zhao, Liuyan; He, Rui; Zabet-Khosousi, Amir; Kim, Keun Soo; Schiros, Theanne; Roth, Michael; Kim, Philip; Flynn, George W.; Pinczuk, Aron; and Pasupathy, Abhay N., "Dopant Segregation In Polycrystalline Monolayer Graphene" (2015). Faculty Publications. 1273.
https://scholarworks.uni.edu/facpub/1273