Faculty Publications

Investigation Of Spin-Gapless Semiconductivity And Half-Metallicity In Ti2Mnal-Based Compounds

Document Type

Article

Journal/Book/Conference Title

Applied Physics Letters

Volume

108

Issue

14

Abstract

The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti2MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.

Department

Department of Physics

Original Publication Date

4-4-2016

DOI of published version

10.1063/1.4945600

Repository

UNI ScholarWorks, Rod Library, University of Northern Iowa

Language

en

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