Faculty Publications
Investigation Of Spin-Gapless Semiconductivity And Half-Metallicity In Ti2Mnal-Based Compounds
Document Type
Article
Journal/Book/Conference Title
Applied Physics Letters
Volume
108
Issue
14
Abstract
The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti2MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.
Department
Department of Physics
Original Publication Date
4-4-2016
DOI of published version
10.1063/1.4945600
Repository
UNI ScholarWorks, Rod Library, University of Northern Iowa
Language
en
Recommended Citation
Lukashev, P.; Kharel, P.; Gilbert, S.; Staten, B.; Hurley, N.; Fuglsby, R.; Huh, Y.; Valloppilly, S.; Zhang, W.; Yang, K.; Skomski, R.; and Sellmyer, D. J., "Investigation Of Spin-Gapless Semiconductivity And Half-Metallicity In Ti2Mnal-Based Compounds" (2016). Faculty Publications. 1084.
https://scholarworks.uni.edu/facpub/1084