Faculty Publications
Modification Of Electronic Band Structure In Ml + Nl (M = 1, 2; N = 1-5) Free-Stacking Graphene
Document Type
Article
Journal/Book/Conference Title
Applied Physics Letters
Volume
109
Issue
15
Abstract
In this paper, we studied stacked mL + nL graphene layers using Raman scattering spectroscopy. Our results indicate that the 2D band from stacked graphene can be considered as a superposition of those from the constituent nL and mL graphene layers, and a blueshift in the 2D band is observed when n or m = 1. The blueshift increases with the number of stacked layers and can be well understood by the reduction of Fermi velocity in the single layer graphene, as studied in the 1L + 1L (or twisted bilayer) case. As the number of stacked layers changes from 1 to 5, the Fermi velocity in the single layer graphene reduces to about 85% of its initial value. This study shows a convenient way to realize the modification of the Fermi velocity in free-stacking graphene and is of significance to the applications of graphene-based heterostructures.
Department
Department of Physics
Original Publication Date
10-10-2016
DOI of published version
10.1063/1.4964706
Repository
UNI ScholarWorks, Rod Library, University of Northern Iowa
Language
en
Recommended Citation
Ji, Jianting; He, Rui; Jie, Yinghao; Zhang, Anmin; Ma, Xiaoli; Pan, Linjing; Wang, Le; Zhang, Liyuan; and Zhang, Qing Ming, "Modification Of Electronic Band Structure In Ml + Nl (M = 1, 2; N = 1-5) Free-Stacking Graphene" (2016). Faculty Publications. 1013.
https://scholarworks.uni.edu/facpub/1013
