Spin-glass ordering in the layered III-VI diluted magnetic semiconductor [formula omitted]
Journal of Applied Physics
Magnetization and ac susceptibility measurements on single crystalline [formula omitted] [formula omitted] have been measured near the spin-glass transition. No other III-VI diluted magnetic semiconductor (DMS) is currently known to exhibit a spin-glass transition for comparison with [formula omitted]. Both the magnetization and ac susceptibility measurements were analyzed according to the appropriate universal scaling function for spin-glass transitions. The nonlinear magnetization scaled with the critical exponent values [formula omitted] and [formula omitted] for a spin-glass transition temperature [formula omitted]. The analysis of the ac susceptibility’s out-of-phase component [formula omitted] yielded the parameter values [formula omitted], [formula omitted], and [formula omitted]. The values of the critical exponents are consistent with those obtained in many DMS and non-DMS insulating spin glasses with different lattice structures and exchange interactions. These results indicate that III-V DMS materials such as [formula omitted] belong in the same three-dimensional short-range Heisenberg universality class as other DMS and non-DMS insulating spin glasses. © 2010, American Institute of Physics. All rights reserved.
Original Publication Date
DOI of published version
Pekarek, T. M.; Watson, E. M.; Shand, P. M.; Miotkowski, I.; and Ramdas, A. K., "Spin-glass ordering in the layered III-VI diluted magnetic semiconductor [formula omitted]" (2010). Faculty Publications. 2098.