Faculty Publications

Spin-Glass Ordering In The Layered Iii-Vi Diluted Magnetic Semiconductor [Formula Omitted]

Document Type

Article

Journal/Book/Conference Title

Journal of Applied Physics

Volume

107

Issue

9

First Page

6557

Abstract

Magnetization and ac susceptibility measurements on single crystalline [formula omitted] [formula omitted] have been measured near the spin-glass transition. No other III-VI diluted magnetic semiconductor (DMS) is currently known to exhibit a spin-glass transition for comparison with [formula omitted]. Both the magnetization and ac susceptibility measurements were analyzed according to the appropriate universal scaling function for spin-glass transitions. The nonlinear magnetization scaled with the critical exponent values [formula omitted] and [formula omitted] for a spin-glass transition temperature [formula omitted]. The analysis of the ac susceptibility’s out-of-phase component [formula omitted] yielded the parameter values [formula omitted], [formula omitted], and [formula omitted]. The values of the critical exponents are consistent with those obtained in many DMS and non-DMS insulating spin glasses with different lattice structures and exchange interactions. These results indicate that III-V DMS materials such as [formula omitted] belong in the same three-dimensional short-range Heisenberg universality class as other DMS and non-DMS insulating spin glasses. © 2010, American Institute of Physics. All rights reserved.

Department

Department of Physics

Original Publication Date

5-1-2010

DOI of published version

10.1063/1.3366616

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