Identifying phenomenological magnetoresistive properties of spin valves
IEEE Transactions on Magnetics
5 PART 2
A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices. © 1996 IEEE.
Original Publication Date
DOI of published version
Oti, J. O.; Kim, Y. K.; and Shand, P. M., "Identifying phenomenological magnetoresistive properties of spin valves" (1996). Faculty Publications. 4087.