Large physisorption strain in chemical vapor deposition of graphene on copper substrates
copper, CVD, Graphene, strain
Graphene single layers grown by chemical vapor deposition on single crystal Cu substrates are subject to nonuniform physisorption strains that depend on the orientation of the Cu surface. The strains are revealed in Raman spectra and quantitatively interpreted by molecular dynamics (MD) simulations. An average compressive strain on the order of 0.5% is determined in graphene on Cu(111). In graphene on Cu (100), MD simulations interpret the observed highly nonuniform strains. © 2012 American Chemical Society.
Original Publication Date
DOI of published version
He, Rui; Zhao, Liuyan; Petrone, Nicholas; Kim, Keun Soo; Roth, Michael; Hone, James; Kim, Philip; Pasupathy, Abhay; and Pinczuk, Aron, "Large physisorption strain in chemical vapor deposition of graphene on copper substrates" (2012). Faculty Publications. 1790.